High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform
収録刊行物
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- Appl. Phys. Lett.
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Appl. Phys. Lett. 87 (10), 103501-103503, 2005
Appl. Phys. Lett. 87 (10), 103501-103503, 2005