Classical MD Simulation of C_<60> Adsorbed on GaAs(001) Surface
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説明
Constant temperature classical molecular dynamics(MD) simulation is carried out to investigate the C_<60> adsorption on GaAs(001) As-rich surface, which was recently reported by the STM experiment by Xue et al.. The present theoretical results agree with one of the important feature of the STM observation, i.e. the pairing of C_<60> on the first layer. Unfortunately, in the overlayers, the (110) C_<60> thin film cannot be realized in the present simulation as opposed to the STM observation. This suggests the necessity to include the effect of charge transfer from As to C_<60>, which was not taken into account in the present simulation.
収録刊行物
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- 東北大学研究所報告. A集, 物理学・化学・冶金学 = Science reports of the Research Institutes, Tohoku University. Ser. A, Physics, chemistry and metallurgy
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東北大学研究所報告. A集, 物理学・化学・冶金学 = Science reports of the Research Institutes, Tohoku University. Ser. A, Physics, chemistry and metallurgy 41 (2), 187-190, 1996-03-22
Tohoku University
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詳細情報 詳細情報について
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- CRID
- 1572261551861928064
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- NII論文ID
- 110004640570
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- NII書誌ID
- AA00836167
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- ISSN
- 00408808
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- Web Site
- http://hdl.handle.net/10097/28573
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles
