Monolithic Integration of GaAs Photoconductive Detectors and MESFETs with Distributed Coupling to Optical Fibers
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- Matsuo Nozomu
- Department of Electrical Engineering, Faculty of Engineering, Hokkaido University
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- Ohno Hideo
- Department of Electrical Engineering, Faculty of Engineering, Hokkaido University
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- Hasegawa Hideki
- Department of Electrical Engineering, Faculty of Engineering, Hokkaido University
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説明
In order to realize high speed, crosstalk-free interconnections with high noise immunity for very high speed IC’s and systems, GaAs integrated photoconductive detector/FET receivers with a distributed coupling to optical fibers are developed. The distributed coupling enables a quick and simple connection between the integrated receiver and an optical fiber, with relatively low connection loss of −1.4 dB. The integrated receivers show response of 5 ns rise time for a 0.85 μm light pulse, which is limited by the surface effect of the detector.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 23 (8), L648-L650, 1984
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詳細情報 詳細情報について
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- CRID
- 1572261552219241088
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- NII論文ID
- 110003929580
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- NII書誌ID
- AA10650595
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- 本文言語コード
- en
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- データソース種別
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