Monolithic Integration of GaAs Photoconductive Detectors and MESFETs with Distributed Coupling to Optical Fibers

  • Matsuo Nozomu
    Department of Electrical Engineering, Faculty of Engineering, Hokkaido University
  • Ohno Hideo
    Department of Electrical Engineering, Faculty of Engineering, Hokkaido University
  • Hasegawa Hideki
    Department of Electrical Engineering, Faculty of Engineering, Hokkaido University

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説明

In order to realize high speed, crosstalk-free interconnections with high noise immunity for very high speed IC’s and systems, GaAs integrated photoconductive detector/FET receivers with a distributed coupling to optical fibers are developed. The distributed coupling enables a quick and simple connection between the integrated receiver and an optical fiber, with relatively low connection loss of −1.4 dB. The integrated receivers show response of 5 ns rise time for a 0.85 μm light pulse, which is limited by the surface effect of the detector.

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詳細情報 詳細情報について

  • CRID
    1572261552219241088
  • NII論文ID
    110003929580
  • NII書誌ID
    AA10650595
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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