E-mode GaAs HJFET for Power Amplifier MMIC of Handy Phones

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Bibliographic Information

Other Title
  • 携帯電話パワーアンプMMIC用 E-Mode GaAs HJFET

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Description

In order to increase the taking time of a handy phone, power-saving at the waiting time, as well as the taking time, is indispensable. For this purpose, we have newly developed a fully enhancement-mode GaAs HJFET(E-HJFET), where the drain leakage current can be cut off at zero gate-bias voltage. The developed E-HJFET(Vth=+0.23V)exhibited 31.5dBm output power, 79.6% power added efficiency(PAE)at 836MHz for 3.5V drain voltage operation. Moreover, the drain leakage current at Vgs=OV is as small as 0.7uA/mm. Power amplifier MMIC implemented by the developed E-HJFET was designed, predicting a high efficiency performance of 70%.

Journal

  • Technical report of IEICE. ICD

    Technical report of IEICE. ICD 98 (525), 1-6, 1999-01-22

    The Institute of Electronics, Information and Communication Engineers

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Details 詳細情報について

  • CRID
    1572261552344793728
  • NII Article ID
    110003317253
  • NII Book ID
    AN10013276
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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