Growth of ZnSe–ZnS Strained-Layer Superlattices by Metallorganic Molecular Beam Epitaxy

  • Taike Akira
    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
  • Teraguchi Nobuaki
    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
  • Konagai Makoto
    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
  • Takahashi Kiyoshi
    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

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説明

Metallorganic molecular beam epitaxial (MOMBE) growth of ZnSe–ZnS strained-layer superlattices (SLS) on (100) GaAs substrates has been demonstrated for the first time. Diethylzinc, diethylselenide and diethylsulphide were used as source gases and pyrolysis of DESe and DES was carried out in cracking cells. The satellite peaks observed by X-ray diffraction measurements are indicative of superlattice structures. Photoluminescence spectra of SLS measured at 4.2 K showed blue emission originating from the recombination of electron-hole pairs between the quantized levels in ZnSe well layers.

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