Production-Worthy HfSiON Gate Dielectric Fabrication Enabling EOT Scalability Down to 0.86nm and Excellent Reliability by Polyatomic Layer Chemical Vapor Deposition Technique

被引用文献1件参考文献5件

ISHIKAWA Dai

Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc.
KAMIYAMA Satoshi

Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc.
SANO Atsushi

Research Dept. 2, Semiconductor Equipment System Lab.
HORII Sadayoshi

Research Dept. 2, Semiconductor Equipment System Lab.
AOYAMA Takayuki

Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc.
NARA Yasuo

Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc.

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Extended abstracts of the ... Conference on Solid State Devices and Materials

Extended abstracts of the ... Conference on Solid State Devices and Materials 2007 846-847, 2007-09-19