Heteroepitaxial growth of (111)3C-SiC on well-lattice-matched (110) Si substrates by chemical vapor deposition
収録刊行物
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- Appl. Phys. Lett.
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Appl. Phys. Lett. 84 3082-, 2004
Appl. Phys. Lett. 84 3082-, 2004