Neutral-Beam-Assisted Etching of SiO<SUB>2</SUB> —A Charge-Free Etching Process—

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Highly directional and low-damage dry etching of SiO2 is realized by neutral-beam-assisted etching reactions. In this etching, low-energy neutral beams and neutral radicals are simultaneously supplied to the specimen, and the etching reactions are enhanced by the neutral beam bombardment. Low-energy (500 eV or less) Ar° neutral beams are generated from Ar+ ion beams by charge exchange reactions. Neutral radicals are generated in a microwave plasma of CHF3. The specimen surface is subjected only to these electrically neutral particles by eliminating charged particles with the retarding grids. The neutral-beam-assisted etching enables deep submicron pattern delineation without any serious radiation damage such as dielectric breakdown. It is a promising substitute for the current plasma etching as a future low-damage etching process.

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詳細情報 詳細情報について

  • CRID
    1572543027248122880
  • NII論文ID
    110003901600
  • NII書誌ID
    AA10457675
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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