GaAs EA Modulator Driver IC

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Bibliographic Information

Other Title
  • GaAs EA変調器駆動回路IC

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Description

We have developed a EA Modulator Driver IC for 2.5Gb/s operation. To get high-gm and high-ft, it employed 0.4μm-Gate HIGFET (Heterostructure Insulated Gate Filed Effect Transistor). To suppress the ringing on the output waveforms, capacitance elements were employed between gate electrode of output buffer and GND. The fabricated IC was housed in 14 pin ceramic package. The maximum output amplitude was 2.6Vp-p. Nominal 10%-90% rise and fall times were approximately 80ps. The IC has S22 of less than -7.4dB in frequency range of from near-DC to 2.5GHz.

Journal

  • Technical report of IEICE. ICD

    Technical report of IEICE. ICD 95 (218), 31-36, 1995-08-25

    The Institute of Electronics, Information and Communication Engineers

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Details 詳細情報について

  • CRID
    1572543027321195008
  • NII Article ID
    110003316952
  • NII Book ID
    AN10013276
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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