Degradation Caused by Reverse Biased Current in PN Junction

1 Citations 10 References
  • MINEKAWA I.
    Matsushita Electronics Corporation Semiconductor Group, Quality Laboratory

Bibliographic Information

Other Title
  • PN接合逆バイアス電流に起因した劣化現象

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Description

The reverse biased current in PN junction are avalanche breakdown current, tunnel current and saturated current. These currents affect the reliability of semiconductor devices. The position of avalanche breakdown, the tunnel current in shallow junction and the structure of high voltage devices are important.

Journal

  • R

    R 97 (370), 43-48, 1997-11-07

    The Institute of Electronics, Information and Communication Engineers

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Keywords

Details 詳細情報について

  • CRID
    1572543027326412672
  • NII Article ID
    110003301734
  • NII Book ID
    AN10013243
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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