Insulator-to-metal transition in ZnO by electric double layer gating
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説明
The authors report high-density carrier accumulation and a gate-induced insulator-to-metal transition in ZnO single-crystalline thin-film field effect transistors by adopting electric double layers as gate dielectrics. Hall effect measurements showed that a sheet carrier density of 4.2x10(13) cm(-2) was achieved. The highest sheet conductance at room temperature was similar to 1 mS, which was sufficient to maintain the metallic state down to 10 K. These results strongly suggest the versatility of electric double layer gating for various materials.
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 91 (8), 2007-08
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詳細情報 詳細情報について
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- CRID
- 1572543027678942336
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- NII論文ID
- 120006581849
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- ISSN
- 00036951
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- 本文言語コード
- en
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- データソース種別
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