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A Large-Signal MOSFET Model Based on Transient Carrier Response for RF Circuits
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- WATANABE Kazufumi
- Graduate School of Engineering, Tohoku University
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- KOTANI Koji
- Graduate School of Engineering, Tohoku University
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- TERAMOTO Akinobu
- New Industry Creation Hatchery Center, Tohoku University
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- SUGAWA Shigetoshi
- Graduate School of Engineering, Tohoku University
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- OHMI Tadahiro
- New Industry Creation Hatchery Center, Tohoku University
Search this article
Journal
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 2004 736-737, 2004-09-15
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Details 詳細情報について
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- CRID
- 1572824500472272256
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- NII Article ID
- 10022539926
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- NII Book ID
- AA10777858
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- Text Lang
- en
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- Data Source
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- CiNii Articles