Trapping of a photoexcited electron by a donor in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors
書誌事項
- 公開日
- 2011
収録刊行物
-
- Appl. Phys. Lett.
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Appl. Phys. Lett. 99 (11), 113108-, 2011