Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT) (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))

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説明

An advanced model for self-heating effects in power semiconductor devices is derived from principles of irreversible thermodynamics. The importance of the entropy balance equation is emphasized. The governing equations for the coupled transport of charge carriers and heat are valid in both the stationary and transient regimes. Four characteristic effects contributing to the heat generation can be identified: Joule heating, recombination heating, Thomson heating and carrier source heating. Bandgap narrowing effects are included. Hot carrier effects are neglected. Numerical methods to solve the governing equations for the coupled transport of charge carriers and heat are described. Finally, results obtained in simulating latch-up in an IGT are discussed.

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詳細情報 詳細情報について

  • CRID
    1572824502178261888
  • NII論文ID
    110003220321
  • NII書誌ID
    AA10826283
  • ISSN
    09168524
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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