Ultra High-Speed GaAs MESFET IC Modules using Flip Chip Bonding Technique

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Bibliographic Information

Other Title
  • フリップチップ実装を用いた超高速GaAs MESFET ICモジュール

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Description

In order to realize ultra high-speed modules for 40 Gbit/s optical transmission systems, distributed amplifier and signal distributor ICs have been developed using inverted microstrip line design technique and 0.1-μm-gate-length GaAs MESFET with a multilayer interconnection structure. These ICs were mounted in a chip-size-cavity package using transferred microsolder bumps. An amplifier module achieved a 3 dB bandwidth of more than 50 GHz and a gain of 8 dB. A 3 dB bandwidth of a signal distributor was 40 GHz and a loss was 2 dB. These modules were demonstrated at 40 Gbit/s.

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Details 詳細情報について

  • CRID
    1572824502212930304
  • NII Article ID
    110003198954
  • NII Book ID
    AN10012932
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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