Measurement of thermal conductivity of Si ion-implanted GaAs using photoacoustic technique
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- TAKABATAKE Nobuya
- Dept. Electrical and Electronic Eng., KANAGAWA Institute of Technology
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- KOBAYASHI Takeshi
- Dept. Electrical and Electronic Eng., KANAGAWA Institute of Technology
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- KAWAHATA Syuji
- Dept. Electronic Eng., TOKAI Uni.
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- IZUMI Tomio
- Dept. Electronic Eng., TOKAI Uni.
Bibliographic Information
- Other Title
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- 光音響法によるGaAsのSiイオン打ち込み層の熱伝導率の測定
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Description
A photoacoustic method is proposed to measure the thermal conductivity of semiconducting thin films.The method is applied to a disordered layer in GaAs produced by Si ion implantation and annealing behavior of the thermal conductivity of the layer is measured.The thermal conductivity is recovered rapidly at an annealing temperature above 500 ℃ and is reached to 55Wm^<-1>K^<-1>, the value of GaAs at 800℃
Journal
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- IEICE technical report. Component parts and materials
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IEICE technical report. Component parts and materials 98 (163), 37-41, 1998-07-03
The Institute of Electronics, Information and Communication Engineers
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Details 詳細情報について
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- CRID
- 1572824502213174528
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- NII Article ID
- 110003199331
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- NII Book ID
- AN10012932
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- Text Lang
- ja
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- Data Source
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- CiNii Articles
