A Study on the Dislocation Loop Growth and Boron Redistribution During the Post Implantation Annealing

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Other Title
  • イオン注入後の熱処理による転位ループ成長とボロン再分布の検討

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Description

The dislocation loop growth and the redistribution of boron in p- type silicon substrate during the post arsenic implantation annealing are studied.Both the dislocation loop growth and boron redistribution are modeled considering the capture of the diffusion species(boron-interstitial silicon pair)by the loop, based on non-equilibrium boron diffusion model.These phenomena are well explained by this physically based model,even for annealing in very short time in which nonequilibrium diffusion is dominant.

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Details 詳細情報について

  • CRID
    1572824502217207424
  • NII Article ID
    110003200742
  • NII Book ID
    AN10012954
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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