Improvement of Bit-Line Contact Resistance for Memory Devices with Silicide Gate
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- KIM T. H.
- DRAM Product Engineering, Memory Business, Samsung Electronics
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- CHOI Y. J.
- DRAM Product Engineering, Memory Business, Samsung Electronics
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- MOON C. Y.
- DRAM Product Engineering, Memory Business, Samsung Electronics
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- KOH H. C.
- DRAM Product Engineering, Memory Business, Samsung Electronics
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- JIN J. H.
- DRAM Product Engineering, Memory Business, Samsung Electronics
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- RYU B. I.
- DRAM Product Engineering, Memory Business, Samsung Electronics
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収録刊行物
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 1997 126-127, 1997-09-16
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- CRID
- 1573105975049996800
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- NII論文ID
- 10017194288
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- NII書誌ID
- AA10777858
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- 本文言語コード
- en
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