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Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs
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- IDE Toshihide
- Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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- SHIMIZU Mitsuaki
- Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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- YAGI Shuichi
- Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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- INADA Masaki
- Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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- PIAO Guanxi
- Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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- YANO Yoshiki
- Tsukuba Laboratory, TAIYO NIPPON SANSO Corporation
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- AKUTSU Nakao
- Tsukuba Laboratory, TAIYO NIPPON SANSO Corporation
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- OKUMURA Hajime
- Tsukuba Laboratory, TAIYO NIPPON SANSO Corporation
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- ARAI Kazuo
- Tsukuba Laboratory, TAIYO NIPPON SANSO Corporation
Search this article
Journal
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 2006 632-633, 2006-09-13
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Details 詳細情報について
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- CRID
- 1573105975462335488
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- NII Article ID
- 10022546273
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- NII Book ID
- AA10777858
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- Text Lang
- en
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- Data Source
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- CiNii Articles
