Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs

  • IDE Toshihide
    Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
  • SHIMIZU Mitsuaki
    Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
  • YAGI Shuichi
    Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
  • INADA Masaki
    Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
  • PIAO Guanxi
    Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
  • YANO Yoshiki
    Tsukuba Laboratory, TAIYO NIPPON SANSO Corporation
  • AKUTSU Nakao
    Tsukuba Laboratory, TAIYO NIPPON SANSO Corporation
  • OKUMURA Hajime
    Tsukuba Laboratory, TAIYO NIPPON SANSO Corporation
  • ARAI Kazuo
    Tsukuba Laboratory, TAIYO NIPPON SANSO Corporation

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Details 詳細情報について

  • CRID
    1573105975462335488
  • NII Article ID
    10022546273
  • NII Book ID
    AA10777858
  • Text Lang
    en
  • Data Source
    • CiNii Articles

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