Lattice Parameter Control of Epitaxially Grown Hexagonal LaF<SUB>3</SUB> Films on GaAs(111) Substrates by Incorporation of Orthorhombic YF<SUB>3</SUB>

  • Aizawa Kouji
    Precision and Intelligence Laboratory, Tokyo Institute of Technology
  • Ricard Herve
    Precision and Intelligence Laboratory, Tokyo Institute of Technology
  • Ishiwara Hiroshi
    Precision and Intelligence Laboratory, Tokyo Institute of Technology

Search this article

Description

Control of lattice parameters of hexagonal LaF3 thin films has been attempted by incorporation of orthorhombic YF3, in order to realize lattice-matched epitaxial growth of the films on GaAs(111)B substrates. It has been found that the lattice parameter of the YxLa1−xF3 film is equivalently matched to that of GaAs(111) around the mixing ratio x of 0.55. It has also been found from Rutherford backscattering spectroscopy that the channeling minimum yield of the epitaxial films on GaAs(111)B substrates is relatively low (the best value is 0.36), when the mixing ratio of YF3 is close to that of the lattice matching condition.

Journal

Keywords

Details 詳細情報について

  • CRID
    1573105977150200064
  • NII Article ID
    110003922270
  • NII Book ID
    AA10650595
  • Text Lang
    en
  • Data Source
    • CiNii Articles

Report a problem

Back to top