Electrical Properties of Black Phosphorus Single Crystals Prepared by the Bismuth-Flux Method
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- Baba Mamoru
- Department of Electronic Engineering, Iwate University
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- Izumida Fukunori
- Department of Electronic Engineering, Iwate University
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- Morita Akira
- Department of Basic Science, Ishinomaki Senshu University
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- Koike Yoji
- Department of Applied Physics, Tohoku University
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- Fukase Tetsuro
- Institute for Materials Research, Tohoku University
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説明
Systematic measurement of the electrical transport phenomena of black phosphorus grown by the all-closed bismuth-flux method has been performed in the range from room temperature down to 0.5 K for the electrical resistivity and down to 1.5 K for the Hall effect and the magnetoresistance effect. These samples exhibited p-type conduction with two types of acceptors, of which activation energies were 26.1 meV and 11.8 meV, respectively. The effective concentrations of acceptors were typically 1.36×1015 cm−3 for the deeper level and 0.44×1015 cm−3 for the shallower level. The maximum of the Hall mobility was found to be 2×104 cm2/Vs around 20 K. A new observation of n-type conduction below about 7 K for some of these samples suggested the existence of a surface inversion layer as a channel of electron conduction.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 30 (8), 1753-1758, 1991
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詳細情報 詳細情報について
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- CRID
- 1573105977200204160
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- NII論文ID
- 110003902611
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- NII書誌ID
- AA10457675
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles