Diffusion of Cd and Zn into InP and InGaAsP (<I>E</I><SUB>g</SUB>=0.95–1.35 eV)

Search this article

Description

The diffusion of Cd and Zn into InP was investigated at temperatures ranging from 566°C to 715°C. Cd diffusion using a combination source composed of Cd3P2 and InP powder allows us to establish a shallow diffusion depth (Xj) of less than a few microns and to form a highly planar p-n junction without surface deterioration. On the other hand, Zn diffusion using a combination source consisting of Zn3P2 (or ZnP2)+InP powder proceeded rapidly and resulted in irregular diffusion fronts. When selective diffusion of Cd into InP was carried out using a PSG film mask, slip dislocations were found to be generated along the mask edge if the amount of InP powder in the diffusion ampoule was not sufficient (≤100 mg). Cd diffusion into InGaAsP (Eg=0.95–1.35 eV) lattice matched to InP was also carried out, and it was found that the diffusion depth decreases monotonically with decreasing band gap energy.

Journal

Details 詳細情報について

  • CRID
    1573105977201108352
  • NII Article ID
    110003909570
  • NII Book ID
    AA10457675
  • Text Lang
    en
  • Data Source
    • CiNii Articles

Report a problem

Back to top