Tin Diffusion from Doped Oxides for Fabricating GaAs Microwave Devices : B-2: GaAs FET/LED AND DETECTOR
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- ARNOLD Norbert
- University of Duisburg, FB9, Solid State Electronics Department
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- DAEMBKES Heinrich
- University of Duisburg, FB9, Solid State Electronics Department
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- HEIME Klaus
- University of Duisburg, FB9, Solid State Electronics Department
この論文をさがす
収録刊行物
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- Japanese journal of applied physics. Supplement
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Japanese journal of applied physics. Supplement 19 (1), 361-364, 1980-04-30
社団法人応用物理学会
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詳細情報 詳細情報について
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- CRID
- 1573105977278201728
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- NII論文ID
- 110003957237
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- NII書誌ID
- AA10457686
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- ISSN
- 00214922
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles
