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2V/100ns 1T/1C Nonvolatile Ferroelectric Memory Architecture with Bitline-Driven Read Scheme & Non-Relaxation Reference Cell
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- HIRANO Hiroshige
- Kyoto Research Laboratory, Electronics Research Laboratory Matsushita Electronics Corporation
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- HONDA Toshiyuki
- Kyoto Research Laboratory, Electronics Research Laboratory Matsushita Electronics Corporation
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- MORIWAKI Nobuyuki
- Kyoto Research Laboratory, Electronics Research Laboratory Matsushita Electronics Corporation
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- NAKAKUMA Tetsuji
- Kyoto Research Laboratory, Electronics Research Laboratory Matsushita Electronics Corporation
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- INOUE Atsuo
- Kyoto Research Laboratory, Electronics Research Laboratory Matsushita Electronics Corporation
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- NAKANE George
- Kyoto Research Laboratory, Electronics Research Laboratory Matsushita Electronics Corporation
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- CHAYA Shigeo
- Kyoto Research Laboratory, Electronics Research Laboratory Matsushita Electronics Corporation
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- SUMI Tatsumi
- Kyoto Research Laboratory, Electronics Research Laboratory Matsushita Electronics Corporation
Bibliographic Information
- Other Title
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- 2V/100ns 1T/1C強誘電体メモリアーキテクチャー
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Description
Recently, a nonvolatile memory embedded in micrcontrollers has been required to have 100ns access time at 2.0V for mobile information terminals operating with a re-chargeable battery. To achieve this, this paper proposes new architecture for a ferroelectric nonvolatile memory (FeRAM) comprised of (a) Bitline-Driven Read Scheme and (b) Non-Relaxation Reference Cell for high speed and low voltage operation respectively. Using this architecture, a FeRAM with one transistor and one capacitor per bit (1T/1C) cell can have a performance of 100ns access time at 2.0V.
Journal
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- Technical report of IEICE. SDM
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Technical report of IEICE. SDM 96 (226), 65-69, 1996-08-23
The Institute of Electronics, Information and Communication Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1573105977279764736
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- NII Article ID
- 110003309667
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- NII Book ID
- AN10013254
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- Text Lang
- ja
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- Data Source
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- CiNii Articles