The influence of excited states of deep dopants on majority-carrier concentration in a wide-bandgap semiconductor

1 Citations

Journal

  • New J. Phys.

    New J. Phys. 4 (4), "043702 1"-"043702 6", 2008

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Details 詳細情報について

  • CRID
    1573387449826596480
  • NII Article ID
    10029634698
  • Data Source
    • CiNii Articles

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