Photoluminescence of an AlAs/GaAs Superlattice Grown by MBE in the 0.7–0.8 μm Wavelength Region

  • Ishibashi Tadao
    Musashino Electrical Communication Laboratory, Nippon Telegragh and Telephone Public Corporation
  • Suzuki Yoshifumi
    Musashino Electrical Communication Laboratory, Nippon Telegragh and Telephone Public Corporation
  • Okamoto Hiroshi
    Musashino Electrical Communication Laboratory, Nippon Telegragh and Telephone Public Corporation

書誌事項

公開日
1981
公開者
社団法人応用物理学会

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説明

AlAs/GaAs superlattices were grown by molecular beam epitaxy with a GaAs quantum well width Lz of 20–160 Å. An X-ray diffraction technique is shown to be a practical and non-destructive method to measure Lz with in an accuracy of 10%. A photoluminescence measurement showed a sharply peaked structure (ΔE≤50 meV) and indicated that the main carrier recombination process at room temperature is from the n=1 electron quantum level to the n=1 heavy hole level. Carrier concentration dependence of the photoluminescence energy differs from the usual Burstein-Moss shift. The highest emission energy obtained was 1.77 eV (7000 Å).

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詳細情報 詳細情報について

  • CRID
    1573387452151998336
  • NII論文ID
    110003982199
  • NII書誌ID
    AA00690800
  • ISSN
    00214922
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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