Mechanism of gate leakage current generation in GaAs HIGFET

3 Citations 12 References

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Other Title
  • GaAs HIGFETにおけるゲートリーク電流発生機構

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Description

A phenomenon is observed in an i-AlGaAs/n-GaAs HIGFET that the gate leakage current increases under a reverse gate-drain bias. Detailed analysis of the degradation phenomena and characterization of the insulator/semiconductor(I/S) interface using a MIS diode show that this degradation is due to hole trap at the I/S interface near the drain edge of the gate electrode. The degradation is eliminated by CF_4 plasma treatment. The effect of the treatment is explained from an XPS analysis as due to the removal of As_2S_3, which is formed on the GaAs surface in the WSi gate etching process using SF_6/CHF_3.

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Details 詳細情報について

  • CRID
    1573387452170895104
  • NII Article ID
    110003200061
  • NII Book ID
    AN10012954
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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