Performance of p-channel HJFET with Selectively Grown Contact Layers

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Bibliographic Information

Other Title
  • ソースドレイン領域選択成長pチャネルHJFETの試作と評価

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Description

This paper reports on performance of 0.5μm gate p-channel HJFET for GaAs complementary ICs. The device structure consists of i-Al_<0.75>Ga_<0.25>As barrier layer, p-GaAs(2×10^<18>cm^<-3>) channel layer and p^+-GaAs(2×10^<20>cm^<-3>) contact layers. The contact layers were selectively grown by MOMBE. This device achieved gm_<max> of 40mS/mm, Vf of -0.9V, BVg of 6.0V, f_T of 6.8GHz and fmax of 7.0GHz. To estimate GaAs complementary ICs performances, a delay time and power consumption were simulated by SPICE. As a result, t_<pd> of 120ps and 0.09μW/MHz/gate power consumption at V_<DD> of 1.0V were obtained.

Journal

  • Technical report of IEICE. ICD

    Technical report of IEICE. ICD 97 (111), 81-87, 1997-06-20

    The Institute of Electronics, Information and Communication Engineers

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Details 詳細情報について

  • CRID
    1573387452251405440
  • NII Article ID
    110003316613
  • NII Book ID
    AN10013276
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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