Nitrogen doped Mg_x_Zn_1-x_O/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates
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説明
We have grown nitrogen-doped MgxZn1-xO:N films on Zn-polar ZnO single crystal substrates by molecular beam epitaxy. As N-sources, we employed NO-plasma or NH3 gas itself. As x increased, optimum growth temperature window for smooth film morphology shifted to higher temperatures, while maintaining high N-concentration (similar to 1x1019 cm-3). The heterosructures of MgxZn1-xO:N (0.1 < x < 0.4)/ZnO were fabricated into light emitting diodes of 500-mu m-diameter. We observed ultraviolet near-band-edge emission (lambda similar to 382 nm) with an output power of 0.1 mu W for a NO-plasma-doped LED and 70 mu W for a NH3-doped one at a bias current of 30 mA.
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 97 (1), 2010-07
American Institute of Physics
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詳細情報 詳細情報について
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- CRID
- 1573387452608985216
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- NII論文ID
- 120006582064
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- ISSN
- 00036951
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- 本文言語コード
- en
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- データソース種別
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