Lattice Defects in High-Dose As Implantation into Localized Si Area

J-STAGE

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公開日
1988
公開者
公益社団法人 応用物理学会

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説明

Cross-sectional transmission electron microscopy observations have been carried out to clarify two-dimensional depth distributions of lattice defects generated in high-dose (5×1015 and 2×1016 ions/cm2), 80 and 150 keV As-implanted, and annealed Si through 1.0 and 1.5 μm windows on (100) Si. Amorphous Si (a-Si) layer thicknesses formed by implantation range between projected range, Rp, +(5∼6) standards deviation, ΔRp, with a lateral spread of about 0.18 times a-Si thickness under the mask edge. Typical post-annealed, induced defects in such amorphous layers are mask edge defects composed of dislocation lines caused by a complicated process for recovering mask edge amorphous layers, together with commonly observed dislocation loops in high-dose As implantation. Interaction between dislocation loops and knocked-on oxygen atoms is discussed, particularly concerning the elimination or survival of As-rich precipitate-induced dislocation loops.

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