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Preparation of n-ZnO/p-Si Heterojunction by Sol-Gel Process
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- Okamura Takeshi
- Electrotechnical Laboratory
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- Seki Yoji
- Central Research Laboratory, Kyocera Corporation
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- Nagakari Shoken
- Central Research Laboratory, Kyocera Corporation
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- Okushi Hideyo
- Electrotechnical Laboratory
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Description
N-type ZnO thin films with a crack and columnar-free structure were successfully prepared on p-type Si substrates by the sol-gel process. The current-voltage (I-V) characteristics of the heterojunction of n-ZnO/p-Si show a rectification with strong electrical breakdown strength of higher than 107 V/cm. The capacitance-voltage (C-V) characteristics show an approximate linear C−2-V relationship in the reverse bias condition. These results indicate that the ZnO films prepared by the sol-gel process are good enough to be used as a semiconducting material in electrical devices.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 31 (6), L762-L764, 1992
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1573387452980603136
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- NII Article ID
- 130003472693
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- ISSN
- 00214922
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- Text Lang
- en
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- Data Source
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- CiNii Articles