Novel bulk dynamic threshold voltage MOSFET (B-DTMOS) with advanced isolation (SITOS) and gate to shallow-well contact (SSS-C) processes for ultra low power dual gate CMOS

詳細情報 詳細情報について

• CRID

  1573668925604596352

• NII論文ID

  80009647994

• NII書誌ID

  BA21866324

• データソース種別

  • CiNii Articles