Theoretical Studies on Photo-excited Growth of II-VI Compound Semiconductors
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- YOSHIDA Akira
- Toyohashi University of Technology
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- MATSUDA Yuji
- Toyohashi University of Technology
Bibliographic Information
- Other Title
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- II-VI族化合物半導体結晶成長の光励起過程に関する理論解析
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Description
The growth rate of Zn-based II-VI compound semiconductor is markedly enhanced by irradiation of visible light during the deposition. It order to clarify the detailed mechanism, the surface reactions of photo-excited MOVPE were analysed by molecular orbital methods. Photo-induced reactions in the growth process are enhanced for dimethylzinc gas source, but not so much for dimethyl selenide molecules, in agreement with experimental results.
Journal
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- IEICE technical report. Electron devices
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IEICE technical report. Electron devices 96 (66), 67-72, 1996-05-23
The Institute of Electronics, Information and Communication Engineers
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Details 詳細情報について
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- CRID
- 1573668927146608768
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- NII Article ID
- 110003200159
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- NII Book ID
- AN10012954
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- Text Lang
- ja
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- Data Source
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- CiNii Articles
