Enhanced Conductivity of Zinc-oxide thin-films by Ion-Implantation of Hydrogen-atoms
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Abstract
Enhancement of the conductivity of zinc oxide through doping with hydrogen atoms was examined by using ion implantation of highly resistive thin films deposited by rf magnetron sputtering at room temperature. With a doping of 1 X 10(17) atoms cm-2, the conductivity after annealing at 200-degrees-C in an N2 atmosphere at 1 atm rose from the initial 1 X 10(-7) OMEGA-1 cm-1 to 5.5 X 10(2) OMEGA-1 cm-1.
Journal
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- Applied Physics Letters
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Applied Physics Letters 64 (21), 2876-2878, 1994-05-23
American Institute of Physics
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Details 詳細情報について
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- CRID
- 1573668927396194560
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- NII Article ID
- 120002441238
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- NII Book ID
- AA00543431
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- ISSN
- 00036951
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- Web Site
- http://hdl.handle.net/10228/1497
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- Text Lang
- en
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- Data Source
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- CiNii Articles