Advanced Model-Based Hotspot Fix Flow for Layout Optimization with Genetic Algorithm

SOTA Shuhei, UNO Taiga, KAJIWARA Masanari, KODAMA Chikaaki, ICHIKAWA Hirotaka, ABURADA Ryota, KOTANI Toshiya, NAKAGAWA Kei, SAITO Tamaki

Under the low-k1 lithography process, many hotspots are generated and their reduction is an urgent issue for mass production. Several strategies for hotspots fix (HSF) were proposed so far. Among them, two major strategies are "rule-based HSF" and "pattern matching-based HSF". The former is a simple strategy of expanding the width of narrow patterns and spaces based on pre-determined rule to remove hotspots. However, hotspots unable to remove by this strategy are increasing in recent 32nm and 28nm node. On the other hand, the latter is more effective than the former. This HSF can remove hotspots by replacing the pattern with the corresponding fixed pattern if both patterns are registered in the library. When they are not registered, it is understood that hotspots cannot be removed. Therefore, we propose a new model-based HSF strategy. Our strategy finds minimum width of pattern and minimum space between patterns and tries to remove hotspots by moving edges of the patterns. Genetic algorithm determines appropriately which edges to move and how long. The experimental results show the effectiveness of our strategy.

Advanced Model-Based Hotspot Fix Flow for Layout Optimization with Genetic Algorithm

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