Preamorphization of the Channel Region of MOS Devices for Shallow Counter Doping
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- MIYAKE Masayasu
- NTT LSI Laboratories
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- OKAZAKI Yukio
- NTT LSI Laboratories
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- KOBAYASHI Toshio
- NTT LSI Laboratories
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収録刊行物
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 1995 908-910, 1995-08-21
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詳細情報 詳細情報について
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- CRID
- 1573950399985564928
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- NII論文ID
- 10017203588
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- NII書誌ID
- AA10777858
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles