Implementation of HfSiON gate for sub-60nm DRAM dual gate oxide recess channel array transistor (RCAT) and Tungsten gate

1 Citations

Journal

Citations (1)*help

See more

Details 詳細情報について

  • CRID
    1573950400146642688
  • NII Article ID
    10018216541
  • Data Source
    • CiNii Articles

Report a problem

Back to top