Evaluation of Cu_2ZnSnS_4 Films prepared by Sulfurization of E-B Evaporated Precursors

8 References
  • KATAGIRI Hironori
    Department of Electrical Engineering, Nagaoka National College of Technology
  • ISHIGAKI Naoya
    Department of Electrical Engineering, Nagaoka National College of Technology
  • NISHIMURA Masato
    Department of Electrical Engineering, Nagaoka National College of Technology

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Other Title
  • E-B蒸着・気相硫化法によるCu_2ZnSnS_4薄膜の作製と評価

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Description

We could prepared Cu_2ZnSnS_4 (CZTS) thin films by vapor phase sulfurization of E-B evaporated precursors. This film is an interesting material for absorber layer in a solar cell. This semiconductor dose not contain any rare-metal such as indium and any toxic material such as selenium. The X-ray diffraction pattern showed that CZTS thin films has the stannite structure. XRD could confirm that CZTS has not any secondary phase such as ternary compound. By using a new type precursors containing ZnS, we could get strong adhesion of CZTS films to a glass substrate. In this study, the optical band gap energy was estimated as 1.45[eV] which is very close to the optimum value for a solar cell absorber.

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Details 詳細情報について

  • CRID
    1573950402119763200
  • NII Article ID
    110003198938
  • NII Book ID
    AN10012932
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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