Cleaning of GaAs and InP surfaces by atomic hydrogen beam at low temperature

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Other Title
  • 原子状水素によるGaAs、InP表面の低温クリーニング

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Description

Cleaning of GaAs and InP surfaces by atomic hydrogen(H^*)beam irradiation was investigated using synchrotron radiation photoemissin spectroscopy and Auger electron spectroscopy.The H^* beam was generated by thermal dissociation,and the surfaces were cleaned at a sample temperature of 360℃.After the H^* beam irradia tion,the GaAs and Inp surface exhibited a streaky(2xl)and(2x4) RHEED pattern,respectively.It took much longer irradiation time to clean the InP surface than the GaAs surface.Photoemission spctroscopy revealed that the most persistent oxide in the H^* cleaning process is Ga_2O_3 for the GaAs surface,and ln(PO_3)_3for the InP surface.

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Details 詳細情報について

  • CRID
    1573950402123737856
  • NII Article ID
    110003200374
  • NII Book ID
    AN10012954
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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