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Cleaning of GaAs and InP surfaces by atomic hydrogen beam at low temperature
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- Kikawa Takeshi
- Central Research Laboratory,Hitachi
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- Ochiai Isao
- Central Research Laboratory,Hitachi
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- Takatani Shinichiro
- Central Research Laboratory,Hitachi
Bibliographic Information
- Other Title
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- 原子状水素によるGaAs、InP表面の低温クリーニング
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Description
Cleaning of GaAs and InP surfaces by atomic hydrogen(H^*)beam irradiation was investigated using synchrotron radiation photoemissin spectroscopy and Auger electron spectroscopy.The H^* beam was generated by thermal dissociation,and the surfaces were cleaned at a sample temperature of 360℃.After the H^* beam irradia tion,the GaAs and Inp surface exhibited a streaky(2xl)and(2x4) RHEED pattern,respectively.It took much longer irradiation time to clean the InP surface than the GaAs surface.Photoemission spctroscopy revealed that the most persistent oxide in the H^* cleaning process is Ga_2O_3 for the GaAs surface,and ln(PO_3)_3for the InP surface.
Journal
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- IEICE technical report. Electron devices
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IEICE technical report. Electron devices 93 (286), 13-19, 1993-10-22
The Institute of Electronics, Information and Communication Engineers
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Details 詳細情報について
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- CRID
- 1573950402123737856
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- NII Article ID
- 110003200374
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- NII Book ID
- AN10012954
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- Text Lang
- ja
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- Data Source
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- CiNii Articles