Design Limitations due to Substrate Currents and Secondary Impact Ionization Electrons in NMOS LSI's : A-2: MOS DEVICES/BASIC ASPECTS
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- MATSUNAGA Jun-ichi
- Research Laboratory, NEC-TOSHIBA Information Systems Inc.
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- KOHYAMA Susumu
- Research Laboratory, NEC-TOSHIBA Information Systems Inc.
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- KONAKA Masami
- Research Laboratory, NEC-TOSHIBA Information Systems Inc.
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- IIZUKA Hisakazu
- Research Laboratory, NEC-TOSHIBA Information Systems Inc.
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収録刊行物
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- Japanese journal of applied physics. Supplement
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Japanese journal of applied physics. Supplement 19 (1), 93-97, 1980-04-30
社団法人応用物理学会
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詳細情報 詳細情報について
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- CRID
- 1573950402209037440
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- NII論文ID
- 110003957188
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- NII書誌ID
- AA10457686
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- ISSN
- 00214922
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles
