Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias

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Description

We have studied the characteristic trade-offs in low power and low voltage MOSFETs from the viewpoint of back-gate control and body effect factor. Previously reported MOSFET structures are classified into four categories in terms of back-gate structures. It is shown that a MOSFET with a fixed back-bias has only a limited current drive at low voltage irrespective of device structures, while current drive of a dynamic threshold MOSFET with body tied to gate is more enhanced with increasing body effect factor. We have proposed a new dynamic threshold MOSFET, electrically induced body (EIB) DTMOS, which has a very large body effect factor at low threshold voltage and high current drive at low supply voltage.

Journal

  • IEICE Trans. on Electronics, C

    IEICE Trans. on Electronics, C 83 (2), 161-169, 2000-02-25

    The Institute of Electronics, Information and Communication Engineers

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Keywords

Details 詳細情報について

  • CRID
    1573950402232651136
  • NII Article ID
    110003211852
  • NII Book ID
    AA10826283
  • ISSN
    09168524
  • Text Lang
    en
  • Data Source
    • CiNii Articles

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