Injection Level Spectroscopy: A Novel Non-Contact Contamination Analysis Technique in Silicon

この論文をさがす

説明

Microwave photoconductivity decay was measured in the function of the excitation light intensity. Using a new approach to analyze recombination lifetime data an experimental method is presented which is capable of producing qualitative lateral distribution maps of different metal contaminants in a silicon wafer.

収録刊行物

詳細情報 詳細情報について

問題の指摘

ページトップへ