Injection Level Spectroscopy: A Novel Non-Contact Contamination Analysis Technique in Silicon
-
- Ferenczi George
- SEMILAB, Semiconductor Physics Laboratory Rt
-
- Pavelka Tibor
- SEMILAB, Semiconductor Physics Laboratory Rt
-
- Tüttô Péter
- SEMILAB, Semiconductor Physics Laboratory Rt
この論文をさがす
説明
Microwave photoconductivity decay was measured in the function of the excitation light intensity. Using a new approach to analyze recombination lifetime data an experimental method is presented which is capable of producing qualitative lateral distribution maps of different metal contaminants in a silicon wafer.
収録刊行物
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 30 (12), 3630-3633, 1991
公益社団法人 応用物理学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1573950402917794432
-
- NII論文ID
- 130003402558
-
- ISSN
- 00214922
-
- 本文言語コード
- en
-
- データソース種別
-
- CiNii Articles