In<SUB>0.5</SUB>Ga<SUB>0.5</SUB>As/InAlAs Modulation-doped Field Effect Transistors on GaAs Substrates Grown by Low-Temperature Molecular Beam Epitaxy

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  • Masato Hiroyuki
    Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
  • Matsuno Toshinobu
    Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
  • Inoue Kaoru
    Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.

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説明

We report on the lattice-mismatched growth and electrical properties of In0.5Ga0.5As/InAlAs modulation-doped heterostructures on GaAs substrates by molecular beam epitaxy using a wide-gap InAlAs graded buffer layer and low-temperature Molecular Beam Epitaxial growth at about 350°C. A drastic reduction in residual carrier accumulation has been achieved, and a high electron mobility at room temperature of 11100 cm2/V·s was obtained with an electron concentration of 3×1012/cm2. It was found that the cause of residual carrier accumulation is related to the growth interruption or temperature rise after the growth of the graded buffer layer. The fabricated Modulation-doped Field Effect Transistors showed low output conductance, good pinch-off characteristics and no kink effect. The higher transconductance of 270 mS/mm was also obtained.

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