Self-Limiting Atomic-Layer Selective Deposition of Silicon Nitride by Temperature-Controlled Method
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- OOBA Kenji
- Research Center for Nanodevices and Systems, Hiroshima University
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- NAKASHIMA Yoshimitsu
- Research Center for Nanodevices and Systems, Hiroshima University
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- NAKAJIMA Anri
- Research Center for Nanodevices and Systems, Hiroshima University
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- YOKOYAMA Shin
- Research Center for Nanodevices and Systems, Hiroshima University
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収録刊行物
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 1998 22-23, 1998-09-07
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詳細情報 詳細情報について
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- CRID
- 1574231874957269120
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- NII論文ID
- 10017195685
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- NII書誌ID
- AA10777858
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles