High Pressure H_2/D_2 Annealed SONOS Nonvolatile Memory Devices

  • CHOI Sangmoo
    Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
  • JANG Man
    Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
  • PARK Hokyung
    Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
  • JEON Sanghun
    MD laboratory, Samsung Advanced Institute of Technology
  • KIM Juhyung
    MD laboratory, Samsung Advanced Institute of Technology
  • KIM Chungwoo
    MD laboratory, Samsung Advanced Institute of Technology
  • HWANG Hyunsang
    Department of Materials Science and Engineering, Gwangju Institute of Science and Technology

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詳細情報 詳細情報について

  • CRID
    1574231875355580800
  • NII論文ID
    10022539649
  • NII書誌ID
    AA10777858
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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