High Pressure H_2/D_2 Annealed SONOS Nonvolatile Memory Devices
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- CHOI Sangmoo
- Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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- JANG Man
- Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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- PARK Hokyung
- Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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- JEON Sanghun
- MD laboratory, Samsung Advanced Institute of Technology
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- KIM Juhyung
- MD laboratory, Samsung Advanced Institute of Technology
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- KIM Chungwoo
- MD laboratory, Samsung Advanced Institute of Technology
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- HWANG Hyunsang
- Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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収録刊行物
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 2004 652-653, 2004-09-15
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詳細情報 詳細情報について
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- CRID
- 1574231875355580800
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- NII論文ID
- 10022539649
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- NII書誌ID
- AA10777858
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- 本文言語コード
- en
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- データソース種別
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