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Ti-Al Alloy Films Synthesized by Ion-Beam-Enhanced Deposition(Physics, Process, Instrument & Measurements)

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Abstract

Ti-Al thin films were prepared by ion beam enhanced deposition (IBED), where the films were prepared by depositing Ti and Al vapor and simultaneous bombardment with Ar ions in the energy range of 2-20keV. Experiments were undertaken using a compact IBED system with a bucket-type 2.45-GHz electron-cyclotron-resonance ion source and an electron beam evaporation source. Results on the Rutherford backscattering spectrometry have suggested the presence of intermixing layer between substrate and Ti-Al film deposited with simultaneous bombardment with argon ions. X-ray diffraction patterns indicated the formation of AlTi_3, αTi(Al), βTi(Al) and amorphous-like phases. The phase structure could be determined by the Ar ion energy and the Ar/(Ti+Al) transport ratio.

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Details

  • CRID
    1574231877022604160
  • NII Article ID
    110006487031
  • NII Book ID
    AA00867058
  • ISSN
    03874508
  • Text Lang
    en
  • Data Source
    • CiNii Articles

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