Ti-Al Alloy Films Synthesized by Ion-Beam-Enhanced Deposition(Physics, Process, Instrument & Measurements)
Search this article
Ti-Al thin films were prepared by ion beam enhanced deposition (IBED), where the films were prepared by depositing Ti and Al vapor and simultaneous bombardment with Ar ions in the energy range of 2-20keV. Experiments were undertaken using a compact IBED system with a bucket-type 2.45-GHz electron-cyclotron-resonance ion source and an electron beam evaporation source. Results on the Rutherford backscattering spectrometry have suggested the presence of intermixing layer between substrate and Ti-Al film deposited with simultaneous bombardment with argon ions. X-ray diffraction patterns indicated the formation of AlTi_3, αTi(Al), βTi(Al) and amorphous-like phases. The phase structure could be determined by the Ar ion energy and the Ar/(Ti+Al) transport ratio.
- Transactions of JWRI
Transactions of JWRI 22 (2), 215-218, 1993-12