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High Efficiency GaAs Power MMIC with a Single Voltage Supply
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- YAMAMOTO S.
- Matsushita Electronics Corporation Electronics Research Laboratory
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- YOKOYAMA T.
- Matsushita Electronics Corporation Electronics Research Laboratory
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- KUNIHISA T.
- Matsushita Electronics Corporation Electronics Research Laboratory
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- NISHIJIMA M.
- Matsushita Electronics Corporation Electronics Research Laboratory
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- NISHITSUJI M.
- Matsushita Electronics Corporation Electronics Research Laboratory
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- NISHII K.
- Matsushita Electronics Corporation Electronics Research Laboratory
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- ISHIKAWA O.
- Matsushita Electronics Corporation Electronics Research Laboratory
Bibliographic Information
- Other Title
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- 高効率単一電源GaAsパワーMMIC
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Description
A 3-stage MMIC with a single voltage supply has been developed for 1.9GHz PACS. This MMIC utilizes newly developed hetero-junction FETs with high Schottky barrier height (Φb) and high transconductance (gm). This MMIC realized an output power of 24.5dBm (at 1.88GHz) with high gain of 34.1dB and low adjacent channel leakage power of -60.8dBc and low current of 389mA and high power added efficiency of 20.1% under a low single supply of 3.5V.
Journal
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- IEICE technical report. Electron devices
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IEICE technical report. Electron devices 96 (108), 27-31, 1996-06-21
The Institute of Electronics, Information and Communication Engineers
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Details 詳細情報について
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- CRID
- 1574231877100018688
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- NII Article ID
- 110003200127
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- NII Book ID
- AN10012954
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- Text Lang
- ja
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- Data Source
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- CiNii Articles