Numerical Analysis of Substrate- and Surface-Related Kink Phenomena in GaAs FETs
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- KAZAMI Yusuke
- Faculty of Systems Engineering, Shibaura Institute of Technology
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- MITANI Yasutaka
- Faculty of Systems Engineering, Shibaura Institute of Technology
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- WAKABAYASHI Akira
- Faculty of Systems Engineering, Shibaura Institute of Technology
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- KASAI Daisuke
- Faculty of Systems Engineering, Shibaura Institute of Technology
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- HORIO Kazushige
- Faculty of Systems Engineering, Shibaura Institute of Technology
Bibliographic Information
- Other Title
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- GaAs FETにおける基板および表面に起因したキンク現象の数値解析
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Description
The kink in GaAs MESFETs is studied by two-dimensional numerical analysis in which substrate traps, surface states and impact ionization of carriers are considered. It is shown that the kink could occur due to a space-charge effect originated from generated hole capturing by substrate traps or surface states. The gate-length dependence of kink phenomena is analyzed, and device structures expected to have less surface-state effects, such as a recessed-gate structure and a structure with n^+ -source region, are also analyzed to study how the kink could be reduced. Transient simulation is also performed to study how the lag phenomena or pulsed 1-V characteristics are influenced by impact ionization of carriers.
Journal
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- IEICE technical report. Electron devices
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IEICE technical report. Electron devices 102 (557), 11-18, 2003-01-10
The Institute of Electronics, Information and Communication Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1574231877166162944
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- NII Article ID
- 110003175267
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- NII Book ID
- AN10012954
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- Text Lang
- ja
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- Data Source
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- CiNii Articles
