Time-of-Flight Measurement of Undoped Glow-Discharged a-Si: H
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- Shirafuji Junji
- Department of Electrical Engineering, Faculty of Engineering, Osaka University
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- Matsui Hirosuke
- Department of Electrical Engineering, Faculty of Engineering, Osaka University
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- Inuishi Yoshio
- Department of Electrical Engineering, Faculty of Engineering, Osaka University
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- Hamakawa Yoshihiro
- Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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説明
Time-of-flight measurement has been carried out on glow-discharged a-Si: H films. It is observed that the electron transport is fairly non-dispersive above room temperature, while holes have a highly-dispersive nature. In its temperature dependence, the electron mobility shows a tendency to saturate at higher temperatures and has an activation energy of 0.2 eV in the low-temperature region. From the saturation characteristic of the relation between the electron-induced charge and the applied field on thin samples, the μdτ product is estimated to be about 2.6–6×10−9 cm2/V at room temperature. A model based on a multiphase structure of a-Si: H is proposed to explain, in a consistent manner, the characteristic transport of electrons and holes.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 22 (5), 775-779, 1983
公益社団法人 応用物理学会
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詳細情報 詳細情報について
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- CRID
- 1574231877843344000
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- NII論文ID
- 130003464482
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- ISSN
- 00214922
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- 本文言語コード
- en
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- データソース種別
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