Time-of-Flight Measurement of Undoped Glow-Discharged a-Si: H

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  • Shirafuji Junji
    Department of Electrical Engineering, Faculty of Engineering, Osaka University
  • Matsui Hirosuke
    Department of Electrical Engineering, Faculty of Engineering, Osaka University
  • Inuishi Yoshio
    Department of Electrical Engineering, Faculty of Engineering, Osaka University
  • Hamakawa Yoshihiro
    Department of Electrical Engineering, Faculty of Engineering Science, Osaka University

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Description

Time-of-flight measurement has been carried out on glow-discharged a-Si: H films. It is observed that the electron transport is fairly non-dispersive above room temperature, while holes have a highly-dispersive nature. In its temperature dependence, the electron mobility shows a tendency to saturate at higher temperatures and has an activation energy of 0.2 eV in the low-temperature region. From the saturation characteristic of the relation between the electron-induced charge and the applied field on thin samples, the μdτ product is estimated to be about 2.6–6×10−9 cm2/V at room temperature. A model based on a multiphase structure of a-Si: H is proposed to explain, in a consistent manner, the characteristic transport of electrons and holes.

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