Time-of-Flight Measurement of Undoped Glow-Discharged a-Si: H

Shirafuji Junji, Matsui Hirosuke, Inuishi Yoshio, Hamakawa Yoshihiro

Time-of-Flight Measurement of Undoped Glow-Discharged a-Si: H

J-STAGE

Shirafuji Junji

Department of Electrical Engineering, Faculty of Engineering, Osaka University
Matsui Hirosuke

Department of Electrical Engineering, Faculty of Engineering, Osaka University
Inuishi Yoshio

Department of Electrical Engineering, Faculty of Engineering, Osaka University
Hamakawa Yoshihiro

Department of Electrical Engineering, Faculty of Engineering Science, Osaka University

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説明

Time-of-flight measurement has been carried out on glow-discharged a-Si: H films. It is observed that the electron transport is fairly non-dispersive above room temperature, while holes have a highly-dispersive nature. In its temperature dependence, the electron mobility shows a tendency to saturate at higher temperatures and has an activation energy of 0.2 eV in the low-temperature region. From the saturation characteristic of the relation between the electron-induced charge and the applied field on thin samples, the μ_dτ product is estimated to be about 2.6–6×10⁻⁹ cm²/V at room temperature. A model based on a multiphase structure of a-Si: H is proposed to explain, in a consistent manner, the characteristic transport of electrons and holes.