Preparation of Ferroelectric PbTiO<SUB>3</SUB> Thin Film by Reactive Sputtering

Okamura Takeshi, Adachi Masatoshi, Shiosaki Tadashi, Kawabata Akira

Preparation of Ferroelectric PbTiO<SUB>3</SUB> Thin Film by Reactive Sputtering

J-STAGE

Okamura Takeshi

Kyocera Corporation
Adachi Masatoshi

Department of Electronics, Faculty of Engineering, Kyoto University
Shiosaki Tadashi

Department of Electronics, Faculty of Engineering, Kyoto University
Kawabata Akira

Department of Electronics, Faculty of Engineering, Kyoto University

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説明

Ferroelectric PbTiO₃ thin films have been successfully obtained. The films were fabricated by reactive sputtering using a simple metal composite as a target. Without postannealing, the films with perovskite structure have been obtained at substrate temperatures of 600–620°C. The spontaneous polarization (P_s) and the coercive field (E_c) of a 0.70 μm-thick film were measured as 37 μC/cm² and 86 kV/cm, respectively.